In-gap states induced by distortion in ?-bismuthene

Abstract Ultrathin Bi(110) films have attracted significant attention recently as potential two-dimensional topological insulators. Their band structure induces one-dimensional (1D) helical edge states inside the bulk gap; however, modification of density resulting from Bi atomic distortion has also been suggested. Here we report distortion-modified electronic ?-bismuthene grown on graphene/6H-SiC(0001) by using low-temperature scanning tunneling microscopy/spectroscopy. We found that edges along zigzag boundary between and graphene are reconstructed distorted topographically dependent. The possible trivial origin induced complicates investigation nature in ?-bismuthene. Steps substrate, stripes, domain boundaries induce additional site-dependent in-gap states. Additionally, located an inversion across which atoms configured opposite order. This defect extended spatial distribution 1D parabolic dispersion, hence suggest it to be a very good platform for further exploration